◇◇新语丝(www.xys.org)(xys.dxiong.com)(xys.dropin.org)(xys-reader.org)◇◇ 贵州大学物理系黄伟其教授有违学术道德的引用事件 作者:小人物 发表在 JOURNAL OF APPLIED PHYSICS 102, 053517 (2007) 的论文 "Enhancement of photoluminescence emission in low-dimensional structures formed by irradiation of laser" (第一作者贵州大学 物理系黄伟其教授Wei-Qi Huang,Li Xu, Ke-Yue Wu, Shi-Rong Liu) 其中,第二节第五段: Scanning electron microscopy (EPMA-1600) was used to observe the low-dimensional nanostructures of the samples. The PL spectra of the samples under the 514 nm excitation were measured by using RENISHAW Raman Systems in which the wavelength of the scanning spectra can be from 200 to 800 nm for measuring Stokes peaks and anti- Stokes peaks, and the spot diameter of laser beam for exciting can reach to 1 um.[6–11] 作者引用了文献 [6-11],其中文献 [8-10] 是 [8] S. S. Li, et al, Phys. Rev. B 71, 155301 (2005). [9] S.S. Li, et al, Appl. Phys. Lett. 87, 043 (2005). [10] S. S. Li, et al, J. Appl. Phys. 98, 083704 (2005). 这些被引用的论文 [8,10] 和上面那段文字毫无关系,而且该论文再也没有任何 其他地方引用 [8-10] 这些论文了。 文献 [8] 的期刊名、题目和摘要: PHYSICAL REVIEW B 71, 155301 (2005) Effective-mass theory for hierarchical self-assembly of GaAs/AlxGa1.xAs quantum dots The electronic structures in the hierarchical self-assembly of GaAs/AlxGa1.xAs quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated. In our calculation, the effect of finite offset, valence-band mixing, the effects due to the different effective masses of electrons and holes in different regions, and the real quantum dot structures are all taken into account. The results show that s1d electronic energy levels decrease monotonically, and the energy difference between the energy levels increases as the GaAs quantum dot sQDd height increases; s2d strong state mixing is found between the different energy levels as the GaAs QD width changes; s3d the hole energy levels decrease more quickly than those of the electrons as the GaAs QD size increases; s4d in excited states, the hole energy levels are closer to each other than the electron ones; s5d the first heavy- and light-hole transition energies are very close. Our theoretical results agree well with the available experimental data. Our calculated results are useful for the application of the hierarchical selfassembly of GaAs/AlxGa1.xAs quantum dots to photoelectric devices. 文献 [9] 没有找到。 文献 [10] 的期刊名、题目和摘要: JOURNAL OF APPLIED PHYSICS 98, 083704 (2005) Electron transport through hierarchical self-assembly of GaAs/AlxGa1.xAs quantum dots The transmission of electrons through a hierarchical self-assembly of GaAs/AlxGa1.xAs quantum dots (QDs) is calculated using the coupled-channel recursion method. Our results reveal that the number of conductance peaks does not change when the barrier widths change, but the intensities decrease as the barrier widths increase. The conductance peaks will shift towards low Fermi energies as the transverse width of GaAs QD increases, as the thickness of GaAs quantum well increases, or as the height of GaAs QDs decreases. Our calculated results may be useful in the application of QDs to photoelectric devices. (XYS20080504) ◇◇新语丝(www.xys.org)(xys.dxiong.com)(xys.dropin.org)(xys-reader.org)◇◇